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Creators/Authors contains: "Boćkowski, Michał"

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  1. ; ; ; ; ; ; ; ; ; ; et al (, Applied Physics Express)
    Abstract We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ∼109, a near-unity ideality factor of 1.03, and a barrier height of ∼0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA. 
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  2. ; ; ; ; ; ; ; ; ; ; et al (, Applied Physics Letters)
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